梁静秋
,
李佳
,
王维彪
液晶与显示
doi:10.3969/j.issn.1007-2780.2006.06.004
根据AlGaInP外延片的结构特点设计了LED型微显示器件的主要结构.利用Markus-Christian Amann等人提出的模型对器件电流注入后的空间分布进行了简单的理论分析,总结出了像素元和上隔离沟槽的理想尺寸分别是16 μm×16 μm和2 μm.简述了减薄GaAs衬底的作用,设计衬底电隔离沟槽宽度为5 μm.采用湿法腐蚀工艺进行器件结构制备,利用不同的腐蚀剂对金属层、p-GaP层、AlGaInP层和n-GaAs衬底层进行腐蚀.实验结果表明,腐蚀后的沟槽形貌较好,其深度和宽度可以达到设计要求.
关键词:
发光二极管阵列
,
微显示器件
,
隔离沟槽
,
湿法腐蚀
T.Y.Hsu XU Zuyao
材料科学技术（英）
The critical driving force for martensitic transformation fcc (γ)→hcp(ε) in ternary Fe-Mn-Si alloys increases with the content of Mn and decreases with that of Si. Thermodynamical prediction of MS in ternary Fe-Mn-Si alloys is established. The fcc (γ)®hcp(ε) martensitic transformation in Fe-Mn-Si is a semi-thermoelastic and the nucleation process does not strongly depend on soft mode. Nucleation occurs directly through an overlapping of stacking fault rather than pole mechanism, and it is suggested that stacking fault energy (SFE) is the main factor controlling nucleation. Based on the phenomenological theory of martensite crystallography, a shuffle on (0001)hcp plane is required when d111¹d0002. The derived principal strain in Bain distortion is smaller, i.e., more reasonable than the values given by Christian. Alloying elements strengthening the austenite, lowering SFE of γ phase and reducing TγN temperature may be beneficial to shape memory effect (SME) of Fe-Mn-Si based alloys. Accordingly, Fe-Mn-Si-RE and Fe-Mn-Si-Cr-N (or Fe-Mn-Si-Ni-Cr-N) are worthy to be recommended as shape memory materials with improved SME.
关键词:
侯增寿
,
赵兴国
,
侯文义
,
梁伟
材料热处理学报
doi:10.3969/j.issn.1009-6264.2005.03.003
应用经典扩散理论数学模型及前人和作者测定的数据,对纯铁块状及形成等轴α相的相变动力学进行分析,结果表明,这两种相变都不属于扩散型.将动力学分析取得的相关数据代入界面过程控制相变数学模型,求得γ→α(等轴晶)的激活能为193～198kJ/mol,小于γ铁的自扩散激活能(270kJ/mol),而与其相界扩散激活能相近(152～172kJ/mol).作者认为,Christian将多形性转变、块状转变、再结晶、晶粒长大、有序化等无成分变化的非切变型相变一并划入界面过程控制类是恰当的.由于短程输送涵义易于混淆,不宜用于相变分类.界面过程控制的细节应是"半无序微位移"机制.
关键词:
固态相变
,
短程输送
,
界面过程控制
,
扩散
